Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions
Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions
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DOI：
10.1109/tns.2024.3359261
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发表时间：
2024-02
影响因子：
1.8
通讯作者：
Bangyao Mao;Guijuan Zhao;Xiurui Lv;Xingliang Wang;Wanting Wei;Guipeng Liu;Jiande Liu;Linsheng Liu
中科院分区：
文献类型：
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作者：
Bangyao Mao;Guijuan Zhao;Xiurui Lv;Xingliang Wang;Wanting Wei;Guipeng Liu;Jiande Liu;Linsheng Liu
sic基器件广泛应用于辐射环境中，高通量辐射会导致4H-SiC的非晶化和化学重排。在本文中，我们通过将氮掺杂的4H-SiC暴露在16.5 MeV/u的低通量（108~1010 cm−2）的Ta离子照射下，研究了室温下氮掺杂的n型表面缺陷的演变。原子力显微镜（AFM）成像显示，辐照后的4H-SiC表面出现了细长的突起，随着辐照强度的增加，其均方根（rms）分别增加到1.3、2.7和2.9 nm。在x射线光电子能谱（XPS）中，随着辐照通量的增加，Si-C键减少，Si-O-C键、C-O键和$\text{O}^{\prime}$增加。基于光致发光（PL）光谱和拉曼光谱，我们发现低通量Ta离子辐照SiC的缺陷主要由C空位及其配合物和少量无序的Si-Si键组成。综上所述，SiC的C原子更容易发生碰撞，远离其原始位置，导致Si-C键断裂。随着辐照通量的增大，Si和O原子会占据这些空位，形成相应的缺陷。
SiC-based devices are extensively used in environments subject to radiation, where high-fluence irradiation causes amorphization and chemical reordering in 4H-SiC. In this article, we examine the evolution of defects in the nitrogen-doped, n-type surface region of 4H-SiC at room temperature by exposing it to 16.5 MeV/u Ta ion irradiation at low fluences (108~1010 cm−2). Atomic force microscopy (AFM) imaging reveals elongated protrusions on the surface of the 4H-SiC resulting from irradiation, and the root mean square (rms) increases to 1.3, 2.7, and 2.9 nm with increasing irradiation fluence. In the X-ray photoelectron spectroscopy (XPS) spectra, the Si-C bond decreases, while the Si-O-C bond, C-O bond, and $\text{O}^{\prime }$ increase with increasing irradiation fluence. Based on photoluminescence (PL) spectra and Raman spectra, we suggest that the defects present in the irradiated SiC with low fluence Ta ion mainly consist of C vacancies and their complexes and a small amount of disordered Si-Si bond. In summary, the C atoms of SiC are more likely to collide away from their original positions, leading to Si-C bond breaks. As the irradiation fluence increases, Si and O atoms will occupy these vacancies and form relevant defects.