Properties of nanocrystalline Al-Cu-O films reactively sputtered by DC pulse dual magnetron
Properties of nanocrystalline Al-Cu-O films reactively sputtered by DC pulse dual magnetron
复制标题
DOI：
10.1016/j.apsusc.2011.10.039
复制
发表时间：
2011-12-15
影响因子：
6.7
通讯作者：
Houska, J.
中科院分区：
文献类型：
--
作者：
Blazek, J.;Musil, J.;Houska, J.
本文报道了在Al（2）O（3）薄膜中加入铜对其机械和光学性能的影响。在Ar + O（2）混合气体中，采用直流脉冲双磁控反应共溅射制备了Al-Cu-O薄膜。一个磁控管配备有纯Al靶，第二个磁控管配备有复合Al/Cu靶。Al/Cu靶材上的脉冲长度控制了Al-Cu-O薄膜中Al和Cu的含量。Al-Cu-O薄膜的原子分数为3%，Cu表现出（i）相对高的硬度H，从近似15 GPa增加到近似20 GPa，（ii）随着Cu含量从近似5原子%增加到近似16原子%，增强的弹性恢复W（e）从近似67%增加到近似76 Cu和（iii）满足比率H/E *> 0.1at>= 5at. %的低杨氏模量E * 值（3）H/E *> 0.1的高弹性Al-Cu-O薄膜在高载荷下的压痕过程中表现出增强的抗开裂性。(C)2011年爱思唯尔B。V.保留所有权利。
The article reports on the effect of the addition of copper in the Al(2)O(3) film on its mechanical and optical properties. The Al-Cu-O films were reactively co-sputtered using DC pulse dual magnetron in a mixture of Ar + O(2). One magnetron was equipped with a pure Al target and the second magnetron with a composed Al/Cu target. The amount of Al and Cu in the Al-Cu-O film was controlled by the length of pulse at the Al/Cu target. The Al-Cu-O films with = 3 at.% Cu exhibit (i) relatively high hardness H increasing from similar to 15 GPa to similar to 20 GPa, (ii) enhanced elastic recovery W(e) increasing from similar to 67% to similar to 76% with increasing Cu content from similar to 5 to similar to 16 at.% Cu and (iii) low values of Young's modulus E* satisfying the ratio H/E* >0.1 at >= 5 at.% Cu, and (3) highly elastic Al-Cu-O films with H/E* >0.1 exhibit enhanced resistance to cracking during indentation under high load. (C) 2011 Elsevier B. V. All rights reserved.