Analysis of GaN MagHEMTs
Analysis of GaN MagHEMTs
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DOI：
10.1088/1361-6641/aad58f
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发表时间：
2018-09-01
影响因子：
1.9
通讯作者：
Igic, P.
中科院分区：
文献类型：
--
作者：
Faramehr, S.;Jankovic, N.;Igic, P.
本文给出了首次制备的氮化镓（GaN）磁性高电子迁移率晶体管（MagHEMTs）的模拟、校准、测量输出电流和相对灵敏度。模拟得到的电流不平衡和相对灵敏度与室温下测量的实验数据进行了校准。测量的60个预制器件的平均计算相对灵敏度为11.98%T-1。本文给出了不同几何参数和偏置参数下氮化镓分流磁传感器在不同环境温度下的三维仿真结果。给出了每种情况下设备行为的详细分析。相对于在300 K （S-r = 11.98%T-1）下测得的灵敏度，400 K （S-r = 6.78%T-1）和500 K （S-r = 4.91%T-1）时的相对灵敏度下降。与工作在更低温度下的硅磁场效应晶体管（magfet）相比，GaN maghemt在400k和500k时显示出有希望的预测相对灵敏度。此外，利用Silvaco公司的商用仿真工具箱Atlas对器件几何参数进行优化，将相对灵敏度从11.98%T-1提高到23.29%T-1。
The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T-1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S-r = 6.78%T-1) and 500 K (S-r = 4.91%T-1) compared to the sensitivity measured at 300 K (S-r = 11.98%T-1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T-1 to 23.29%T-1 using the commercial simulation toolbox Atlas, by Silvaco.