Photon and electron excitation of rare-earth-doped amorphous SiN films
Photon and electron excitation of rare-earth-doped amorphous SiN films
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DOI：
10.1016/j.jnoncrysol.2004.03.022
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发表时间：
2004-06
影响因子：
3.5
通讯作者：
A. Zanatta;C. Ribeiro;U. Jahn
中科院分区：
文献类型：
--
作者：
A. Zanatta;C. Ribeiro;U. Jahn
本文报道了Pr ~（3+）、Sm ~（3+）、Dy ~（3+）、Ho ~（3+）和Er ~（3+）分别掺杂的非晶（a-）SiN薄膜的室温可见光和阴极射线发光。在纯氮气氛中，通过共溅射部分覆盖有金属稀土（RE）的Si靶来沉积薄膜。作为沉积方法和条件的结果，膜具有非晶结构和0.5原子%的RE含量，分别通过拉曼散射和离子束分析测定。发光实验是在厚度为0.5 μm的薄膜中进行的，用488.0 nm光子或15 keV电子激发。所有表征均在室温下对沉积态样品进行。的发光光谱的详细调查允许识别所有现有的光学特征，并表明可能的RE离子激发复合机制。除了Si在现代（微）电子学中的重要性之外，目前的实验结果表明，RE掺杂的SiN化合物在可见光能量范围内操作的光电器件中具有潜力。
Room temperature visible photo and cathodoluminescence have been achieved from amorphous (a-)SiN films independently doped with Pr3+, Sm3+, Dy3+, Ho3+, and Er3+ions. The films were deposited by co-sputtering a Si target partially covered with metallic rare-earth (RE) in an atmosphere of pure nitrogen. As a consequence of the deposition method and conditions, the films have an amorphous structure and RE contents of 0.5 at.%, as determined by Raman scattering and ion beam analysis, respectively. The luminescence experiments were carried out in films, typically 0.5 μm thick, after excitation with either 488.0 nm photons or 15 keV electrons. All characterizations were accomplished at room temperature and on as-deposited samples. A detailed investigation of the luminescence spectra allowed the identification of all existing optical features and indicates possible RE ion excitation–recombination mechanisms. In addition to the importance of Si in modern (micro-)electronics, the current experimental findings suggest the potential of RE-doped SiN compounds to opto-electronic devices operating in the visible energy range.