Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy
Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy
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通过对分子束外延生长的 GaN 进行退火来热激活与铍相关的光致发光
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
T. Myers
中科院分区：
文献类型：
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作者：
Kyoungnae Lee;B. Vanmil;M. Luo;Lijun Wang;N. Giles;T. Myers
研究了射频等离子体分子束外延生长的GaN外延层中Be的旋光性与表面极性的关系。掺杂有Be的N极性GaN表现出比类似掺杂的Ga极性GaN显著更高的施主-受主对（DAP）光致发光（PL）强度，这表明Be在微观上不同的位点结合，或者可能形成不同的补偿络合物。高度Be掺杂的Ga极性GaN形成隔离的极性反转区域，然后通过N极性机制将Be并入，从而导致DAP PL。在氮/氢混合物和纯氮气氛下的Ga极性层的高温退火激活DAP PL。（© 2005 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Surface polarity related differences in the optical activity of Be in GaN epilayers grown by rf-plasma molecular beam epitaxy are investigated. N-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)