Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor
Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor
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单电子晶体管中超小硅量子点的传输光谱
DOI：
10.1063/1.1405805
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发表时间：
2001
影响因子：
4
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
M. Saitoh;Toshiki Saito;T. Inukai;T. Hiramoto
我们研究了单电子晶体管中电子通过超小硅量子点的输运。该器件以硅点接触沟道金属氧化物半导体场效应晶体管的形式制造。所形成的点的尺寸估计为小至5.3nm。直到25K都能清楚地观察到负微分电导。结果表明，这是由硅点中量子能级的离散性和隧穿速率到每个能级的变化引起的。电导的精细结构一直持续到77K。通过硅点的电子输运的建模进行。实验结果与计算结果吻合较好，验证了模型的正确性.
We investigate electron transport through the ultrasmall silicon quantum dot in a single-electron transistor. The device is fabricated in the form of a silicon point-contact channel metal–oxide–semiconductor field-effect transistor. The size of the formed dot is estimated to be as small as 5.3 nm. Negative differential conductance is clearly observed up to 25 K. It turns out that this is caused by discreteness of quantum levels in the silicon dot and variation of the tunneling rates to each level. The fine structure of conductance persists up to 77 K. Modeling of the electron transport through the silicon dot is carried out. Good agreement between experiment and calculation is obtained, which confirms the validity of our model.