Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
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DOI：
10.1063/1.4868128
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发表时间：
2014-01
影响因子：
4
通讯作者：
J. Michl;T. Teraji;S. Zaiser;I. Jakobi;G. Waldherr;F. Dolde;P. Neumann;M. Doherty;N. Manson;J. Isoya;J. Wrachtrup
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文献类型：
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作者：
J. Michl;T. Teraji;S. Zaiser;I. Jakobi;G. Waldherr;F. Dolde;P. Neumann;M. Doherty;N. Manson;J. Isoya;J. Wrachtrup
人造金刚石的生产是发展量子计量学和金刚石量子信息应用的关键。金刚石中主要的量子传感器和量子比特候选者是氮空位（NV）色心。这种晶格缺陷具有四种不同的晶体学取向，导致NV中心之间存在固有的不均匀性，这在某些应用中是不期望的。在这里，我们报告了一种微波等离子体辅助化学气相沉积技术在（111）取向的衬底上生长金刚石，它产生了完美的取向（94% ± 2%）的NV中心沿着一个单一的晶体方向生长。此外，发现明显的证据表明，大部分（74% ± 4%）的取向NV中心是由氮首先被包含在（111）生长表面，然后在顶部形成相邻的空位形成的。生长的NV中心的实现的均匀性将极大地有益于量子信息和计量应用。
Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.