Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
Ag–Metal Bonding Conditions for Low-Loss Double-Metal Waveguide for Terahertz Quantum Cascade Laser
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DOI：
10.1143/jjap.47.7926
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发表时间：
2008-10
影响因子：
1.5
通讯作者：
L. Ying;Noriaki Horiuchi-Ikeda;H. Hirayama
中科院分区：
文献类型：
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作者：
L. Ying;Noriaki Horiuchi-Ikeda;H. Hirayama
在高性能太赫兹量子级联激光器(THz-QCL)的研制中，银双金属波导(DMW)因其具有低传输损耗和高热导率而备受关注。在这项研究中，我们研究了THz-QCL的DMW的银-金属键合条件。采用高压加热法，将砷化镓晶片与银金属层结合在一起。在400℃，38.5 kg/cm2的压力下，氮气气氛中30min，我们成功地实现了银的键合。在Ag和GaAs之间插入了一层很薄的钛粘附层。此外，在温度低于400°C时，发现Ti层(厚度为10 nm)是阻止Ag扩散到≥中的屏障。
In the development of high-performance terahertz quantum cascade lasers (THz-QCLs), the use of a Ag double-metal waveguide (DMW) is attractive because it has low propagation-loss and high thermal conductivity. In this study, we investigated the Ag–metal bonding conditions for the DMW of THz-QCL. GaAs wafers were bonded together with Ag–metal layers by applying high-pressure and heat. We achieved successful Ag bonding at 400 °C with an applied pressure of 38.5 kg/cm2 for 30 min in N2 ambient. A thin Ti adhesion layer was inserted between Ag and GaAs. The Ti layer (thickness ≥ 10 nm) was, in addition, found to act as a barrier preventing Ag diffusion into GaAs at temperatures below 400 °C.