Ionic fragmentation of SiH4 following the K-shell excitation
Ionic fragmentation of SiH4 following the K-shell excitation
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K 壳层激发后 SiH4 的离子碎裂
DOI：
10.1088/0031-8949/41/1/017
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
T. Hayaishi
中科院分区：
文献类型：
--
作者：
E. Shigemasa;K. Ueda;Yukinori Sato;A. Yagishita;H. Maezawa;Taizo Sasaki;M. Ukai;T. Hayaishi
在1800- 1900 eV的光子能量范围内，研究了Si：K边附近SiH_4的离子碎裂。在高于Si：ls → σ* 激发的光子能量下观察到的离子碎片主要是原子离子Siq+（q = 1-3）和H+。Si+、Si 2+和Si 3+的丰度比约为4：4：1，并且H+的丰度远高于Si+、Si 2+和Si 3+的丰度之和。H+的平均动能释放估计约为12 eV。SiH 4的这种完全分解和高能H+的喷射被解释为通过空位级联（连续的俄歇和/或科斯特-克罗尼格跃迁）产生的多电荷（主要是+4或+5）母离子的库仑爆炸。
Ionic fragmentation of SiH4 has been studied in the vicinity of the Si: K-edge in the photon energy range 1800-1900eV. Ionic fragments observed at photon energies above the Si: ls → σ* excitation are mostly atomic ions Siq+ (q = 1-3) and H+. Ratios of the abundances for Si+, and Si2+ and Si3+ are roughly 4:4:1, and the abundance of H+ is much higher than the sum of the Si+, Si2+ and Si3+ abundances. The averaged kinetic energy release given to H+ is estimated to be about 12eV. This complete decomposition of SiH4 with the ejection of energetic H+ is interpreted as Coulomb explosion of the multiply-charged (mainly +4 or +5) parent ion produced via the vacancy cascade (successive Auger and/or Coster-Kronig transitions).