Magnetic properties of Fe films epitaxially grown on Cr/GaAs(100) by dc magnetron sputtering
Magnetic properties of Fe films epitaxially grown on Cr/GaAs(100) by dc magnetron sputtering
复制标题
直流磁控溅射在Cr/GaAs(100)上外延生长Fe薄膜的磁性能
DOI：
10.1063/1.121082
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
S. Rezende
中科院分区：
文献类型：
--
作者：
Biao Li;J. R. Fermin;A. Azevedo;F. Aguiar;S. Rezende
本文报道了磁控溅射法在砷化镓衬底上生长单晶铁薄膜。为了与衬底建立外延取向，射频溅射了一层100a的Cr缓冲层。通过x射线衍射、铁磁共振和克尔效应磁强计技术研究了晶体和磁性能。θ-2θ x射线测量表明，仅存在Fe（200）峰，摇摆曲线呈现2°的全宽半最大值。铁磁共振线的线宽约为30 Oe，面内共振场随方位角的变化呈四重对称，无诱导各向异性。平面内硬轴和易轴磁光磁滞回线与铁磁共振结果一致。
We report on the growth of single-crystal Fe films by magnetron sputtering onto GaAs substrates. In order to establish the epitaxial orientation with the substrate a 100 A Cr buffer layer was rf sputtered. The crystalline and magnetic properties were studied by x-ray diffraction, ferromagnetic resonance, and Kerr effect magnetometry techniques. The θ-2θ x-ray measurements show that only the Fe (200) peak is present, and the rocking curve shows a full width half maximum of 2°. Ferromagnetic resonance lines exhibit a line width of about 30 Oe, and the in-plane resonance field as a function of the azimuth angle presents a fourfold symmetry with no induced anisotropy. The in-plane hard- and easy-axis magneto-optical hysteresis loop traces are consistent with the ferromagnetic resonance results.