The Formation and Morphology of Highly Doped N-type Porous Silicon : Effect of Short Etching Time at High Current Density and Evidence of Simultaneous Chemical and Electrochemical Dissolutions
The Formation and Morphology of Highly Doped N-type Porous Silicon : Effect of Short Etching Time at High Current Density and Evidence of Simultaneous Chemical and Electrochemical Dissolutions
复制标题
高掺杂 N 型多孔硅的形成和形貌：高电流密度下短蚀刻时间的影响以及同时化学和电化学溶解的证据
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
K. Ibrahim
中科院分区：
文献类型：
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作者：
Suriani Yaakob;M. A. Bakar;J. Ismail;N. A. Bakar;K. Ibrahim
在高掺杂n型硅衬底上成功制备了多孔硅。PS在短的蚀刻时间（< 5分钟）内以300 mA cm在1：1（v/v）氢氟酸（HF）（49%）和乙醇（95%）电解液中电化学形成。PS表面具有球形和不规则形状的孔，其平均直径恒定，与蚀刻时间无关。然而，PS的横截面形态取决于蚀刻时间，其中结构从具有侧分支的垂直排列的柱改变为无分支且光滑的壁，孔隙率相应地从25%增加到70%。当刻蚀时间延长到180 s时，PS的表面粗糙度有增加的趋势。然而，对于较长的蚀刻时间，粗糙度表现出降低。多孔硅的电导率随孔隙率的增加而降低。因此，这些结果表明同时发生化学和电化学溶解。
Porous silicon (PS) was successfully prepared from highly doped n-type silicon (Si) substrate. The PS was electrochemically formed within a short etching time (< 5 min) at 300 mA cm in 1:1 (v/v) hydrofluoric acid (HF) (49%) and ethanol (95%) electrolyte. The PS surface featured both spherical and irregular shaped pores with constant average diameters regardless of etching time. However, the cross-section morphology of the PS was dependent on etching time where the structure changed from vertically arrayed columns with side branching to unbranched and smooth walls with a corresponding increase in porosity from 25 to 70%. The PS showed a trend of increasing surface roughness as the etching time was prolonged up to 180 s. However, for longer etching times, the roughness demonstrated a decrease. The conductivity of the PS was reduced as the porosity increased. These results therefore suggested the occurrence of simultaneous chemical and electrochemical dissolutions.