ATOMISTIC MECHANISM OF SURFACTANT-ASSISTED EPITAXIAL GROWTH
ATOMISTIC MECHANISM OF SURFACTANT-ASSISTED EPITAXIAL GROWTH
复制标题
表面活性剂辅助外延生长的原子机制
DOI:
10.1103/physrevlett.81.850
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发表时间:
1998
影响因子:
8.6
通讯作者:
R. Miranda
中科院分区:
文献类型:
--
作者:
J. Camarero;J. Ferrón;V. Cros;L. Gómez;A. D. Parga;J. Gallego;J. Prieto;J. Miguel;R. Miranda
Experiments and simulations on the effect of a surfactant on atomic diffusion are presented. Cu adatoms deposited on a Cu(111) surface covered with a monolayer of Pb quickly get buried and diffuse under the Pb layer by exchanging sites with other Cu atoms from the substrate. The surfactant induces layer-by-layer growth by suppressing the hopping mechanism of diffusion over the terraces and promoting atomic exchange, both at the terraces and across the steps. This mechanism may be rather general and has profound implications for the synthesis of artificial materials. [S0031-9007(98)06721-0]