Field-emission of spin-polarized electrons from Cr thin film grown on W{113} surfaces

Field-emission of spin-polarized electrons from Cr thin film grown on W{113} surfaces
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W{113} 表面生长的 Cr 薄膜的自旋极化电子场发射

DOI:
10.1109/ivnc.2018.8520268
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发表时间:
2018
期刊:
Technical Digest of International Vacuum Nanoelectronics Conference 2018
影响因子:
--
通讯作者:
Koichi Hata
Koichi Hata
中科院分区:
--
文献类型:
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作者:
Shigekazu Nagai;Kento Miyazaki;Kazuya Kunoh;Tatsuo Iwata;Koichi Hata

文献摘要

相似文献

在室温下测量了生长在W{113}面上的Cr薄膜经1000 K退火后的场发射电子的自旋极化。30%的自旋极化幅度是Cr(001)表面的三分之二,这对应于Cr(001)层中具有多数自旋的原子数量的一小部分。另一方面,Cr/W(113)场致发射体的发射电流与常规场致发射体相当,自旋极化电子源的品质因数比Cr/W(001)场致发射体高两个数量级。
Spin polarization of field-emitted electrons from a Cr thin film grown on W{113 facets after annealing at 1000 K was measured at room temperature. The magnitude of spin polarization of 30% was two thirds of that of a Cr(001) surface, which corresponds to a fraction of the number of atoms with majority spin in Cr(001) layers. On the other hand, the emission current from Cr/W{113 was comparable to conventional field emitters so that figure of merit for spin polarized electron sources was two orders of magnitude higher than that for the Cr/W(001) emitter in previous strudy.