Semi-analytical model of Hall resistance anomalies (overshooting) in the fractional quantized Hall effect
Semi-analytical model of Hall resistance anomalies (overshooting) in the fractional quantized Hall effect
复制标题
分数量化霍尔效应中霍尔电阻异常（过调）的半解析模型
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
A. Siddiki
中科院分区：
文献类型：
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作者：
A. Salman;A. Mese;M. B. Yucel;A. Siddiki
摘要我们预测了在高迁移率二维电子中观察到的电阻异常
AbstractWe predict resistance anomalies to be observed at high-mobility two-dimensional electron
systems (2DESs) in the fractional quantized Hall regime, where the narrow
(L < 10 μm) Hall bar is defined by top gates. A
semi-analytic calculation scheme is used to describe the formation of integral and
fractional incompressible strips. We incorporate the screening properties of the 2DES,
together with the effects of perpendicular magnetic field, to calculate the effective
widths of the current carrying channels. The many-body effects are included to our
calculation scheme via the energy gap obtained from the well-accepted formulation of the
composite fermions. We show that the fractional incompressible strips at the edges,
assuming different filling factors, become evanescent and can co-exist in certain magnetic
field intervals yielding an overshoot at the Hall resistance, similar to that of the
integral quantized Hall effect. We also provide a mechanism to explain the absence of 1/3
state in Fabry-Perot type interference experiments. A gate defined narrow sample design is
proposed to enhance the visibility of fragile effects like interference and overshooting
based on our semi-analytical model.