Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser
Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser
复制标题
带级跃迁半导体激光器中的光谱烧孔和非线性增益下降
DOI:
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发表时间:
1973
期刊:
影响因子:
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通讯作者:
Y. Nishimura
中科院分区:
文献类型:
--
作者:
Y. Nishimura
Frequency characteristics of a nonlinear lasing gain under the condition that a laser oscillation exists at a fixed frequency are theoretically obtained on the basis of a band-to-level transition model (without the k - selection rule) of semiconductor lasers. This nonlinear gain exhibits a spectral hole-burning in the vicinity of oscillation frequency as well as a decrease from the corresponding linear gain over the entire spectral region. The analysis uses a semiclassical density-matrix formalism and a perturbation method. The lasing transitions are assumed to occur between a conduction-band Bloch state and a localized acceptor level. The above-defined nonlinear gain is obtained from a third-order perturbation calculation. In the neighborhood of a lasing frequency, a narrow spectral region where the gain is burned is theoretically found (hole-burning effect). The width of this "hole" increases with the relaxation rate at acceptor states, and is almost independent of excitation level. The gain decrease over the entire spectral region results from the absence of the k -selection rule, and corresponds to the saturation of spontaneous emission after the onset of lasing. Rapid relaxations in the conduction band and lower acceptor concentrations make more significant gain decreases at a frequency sufficiently apart from the lasing frequency. This effect makes possible a single axial-mode operation in some cases.