Ion Bombardment Enhanced Etching for Bi–Ca–Sr–Cu–O High-Tc Superconducting Thin Films
Ion Bombardment Enhanced Etching for Bi–Ca–Sr–Cu–O High-Tc Superconducting Thin Films
复制标题
Bi-Ca-Sr-Cu-O高温超导薄膜的离子轰击增强蚀刻
DOI：
10.1143/jjap.29.2307
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发表时间：
1990
影响因子：
1.5
通讯作者：
Shigeo Suzuki
中科院分区：
文献类型：
--
作者：
S. Fujiwara;R. Yuasa;K. Shikichi;Yuh Matsuta;M. Nakao;Shigeo Suzuki
首次将离子轰击增强刻蚀（IBEE）技术应用于Bi-Ca-Sr-Cu-O（BCSCO）高温超导薄膜。发现用200 keV Si++聚焦离子束辐照形成的损伤区在1当量KOH溶液中选择性溶解。IBEE工艺可分辨BCSCO薄膜中的0.1 µm图案。其他强碱性溶液，如NaOH溶液也是有效的BCSCO膜的选择性蚀刻，但酸性溶液没有得到增强的蚀刻速率在照射区域。KOH处理对BCSCO膜的Tc没有影响。成功制造了宽度为1.5 µm的桥结构，Tc几乎没有退化。
Ion bombardment enhanced etching (IBEE) has been first applied to Bi–Ca–Sr–Cu–O (BCSCO) high-Tc superconducting thin films. It was found out that the damaged region formed by the ion irradiation with a 200 keV Si++ focused ion beam was selectively dissolved in 1 normal KOH solution. The IBEE process resolves 0.1 µm patterns in the BCSCO films. Other strong alkaline solutions such as NaOH solution were also effective for the selective etching of the BCSCO films, but acid solutions did not give an enhanced etch rate at the irradiated region. The KOH treatment gave no effect on Tc of the BCSCO film. Bridge structures with the width of 1.5 µm were successfully fabricated with little degradation in Tc.