Thermal comparison of long-wavelength vertical-cavity surface-emitting laser diodes
Thermal comparison of long-wavelength vertical-cavity surface-emitting laser diodes
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DOI：
10.1049/el:19940589
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发表时间：
1994-05
影响因子：
1.1
通讯作者：
J. Piprek;S. Yoo
中科院分区：
文献类型：
--
作者：
J. Piprek;S. Yoo
热流有限元分析应用于基本器件概念，包括InGaAsP/InP或AlAs/GaAs衬底侧镜（安装自上而下或自上而下）的平面结构和Si/SiO/sub 2/介质镜的蚀刻阱激光器。在某些情况下，计算出的热阻值高于短波长器件，但GaAs衬底上的晶片熔合结构显示出明显的热优势。
Heat flow finite element analysis is applied to basic device concepts, including planar structures with InGaAsP/InP or AlAs/GaAs substrate side mirrors (mounted top-up or top-down) and etched-well lasers with Si/SiO/sub 2/ dielectric mirrors. In several cases, the calculated thermal resistance values are higher than with short-wavelength devices, but wafer-fused structures on GaAs substrate show clear thermal advantages.