On the Accurate Measurement and Calibration of S-Parameters for Millimeter Wavelengths and Beyond
On the Accurate Measurement and Calibration of S-Parameters for Millimeter Wavelengths and Beyond
复制标题
毫米波及以上波长 S 参数的精确测量和校准
DOI：
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发表时间：
2015
影响因子：
4.3
通讯作者：
O. Ambacher
中科院分区：
文献类型：
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作者：
M. Seelmann;M. Ohlrogge;R. Weber;D. Peschel;H. Massler;M. Riessle;A. Tessmann;A. Leuther;M. Schlechtweg;O. Ambacher
众所周知，在毫米(毫米波)和亚毫米波范围内，晶片上S参数的测量往往不准确，并且存在严重的系统伪影。在本文中，我们证实了这些伪影与在衬底中被激发和传播的杂波模式有关。这些寄生波分量可能分散在晶片上的相邻结构上，并导致有害的串扰。虽然这些寄生分量恶化了测量本身，但由于这些模式已经存在于校准测量中并且被无意地导入并叠加到测量数据中的事实，出现了更严重的复杂性。在本文中，我们提出了一种具有新颖屏蔽特性的新型射频衬垫，并证明了通过使用合适的在片耦合结构可以有效地抑制这些寄生模式。此外，还提出了一种新的校准基板和方法，并证明该方法能够去除高达450 GHz的S参数测量中的伪影。
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave modes that are excited and propagate in the substrate. These parasitic wave components may be scattered at neighboring structures on the wafer and cause detrimental crosstalk. While these parasitic components deteriorate the measurement itself, an even more serious complication arises from the fact that these modes are already present in the calibration measurement and are unintentionally imported and superposed to the measurement data. In this paper, we present a new type of RF pad with novel screening features and show that these parasitic modes can be efficiently suppressed by the use of proper on-wafer couple structures. Moreover, a novel calibration substrate and method is presented and demonstrated to be capable to remove spurious artifacts from S-parameter measurements up to 450 GHz.