Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers
Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers
复制标题
DOI：
10.1016/j.apsusc.2011.01.106
复制
发表时间：
2011-04
影响因子：
6.7
通讯作者：
Guanqun Li;Yuge Li;Geyang Li
中科院分区：
文献类型：
--
作者：
Guanqun Li;Yuge Li;Geyang Li
采用反应磁控溅射法制备了不同Si 3 N4层厚度的HfC/Si 3 N4纳米多层膜。研究了多层膜的显微结构和力学性能。结果表明，当Si 3 N4层厚度小于0.95nm时，非晶Si 3 N4被晶化并与HfC共格生长，相应的多层膜呈现出较强的柱状结构，硬度显著提高，最高达38.2GPa。随着Si 3 N4层厚度的进一步增加，非晶态Si 3 N4的形成阻碍了多层膜的共格生长，从而使多层膜的硬度迅速下降。
HfC/Si3N4nanomultilayers with various thicknesses of Si3N4layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si3N4is forced to crystallize and grow coherently with HfC when the Si3N4layer thickness is less than 0.95nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2GPa. Further increasing Si3N4layer thickness leads to the formation of amorphous Si3N4, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.