Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
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DOI：
10.1063/1.4816837
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发表时间：
2013-07-22
影响因子：
4
通讯作者：
Friedman, D. J.
中科院分区：
文献类型：
--
作者：
Geisz, J. F.;Steiner, M. A.;Friedman, D. J.
我们展示了1.81 eV的GaInP太阳能电池接近肖克利-奎瑟极限，太阳能转换效率为20.8%，外部辐射效率为8%，内部辐射效率为80-90%，在一个太阳AM1.5的全球条件。使用背面金属反射器实现了通过光子再循环的光学增强电压，其改善了光提取。当非辐射Sah-Noyce-Shockley结复合电流通过将结放置在电池的背面在更高带隙的AlGaInP层中而降低时，这种光学增强在一个太阳电流下实现。电致发光和暗电流-电压测量显示了光管理和非辐射暗电流减少的单独效果。(C)2013 AIP Publishing LLC. [http：//dx.doi.org/10.1063/1.4816837]
We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80-90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816837]