A time-to-first spike CMOS imager
A time-to-first spike CMOS imager
复制标题
首次尖峰时间 CMOS 成像仪
DOI：
10.1109/iscas.2004.1329131
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
Xin Qi;Xiaochuan Guo;J. Harris
提出了一种新颖的时间到第一尖峰CMOS成像器，其中来自每个像素的单个尖峰的定时对每个像素的照度进行编码。照度的这种时间表示可以将图像传感器动态范围扩展到100 dB以上。为了降低功耗，采用异步地址事件读出技术。该成像器基本上实现了像素级A/D转换，并受益于持续的深亚微米级工艺缩放。结果显示从32/spl倍/32像素的成像器中制造的0.5 /spl μ/m AMI过程中测量的动态范围为104分贝在一个图像。采用台积电0.18 /spl μ/m标准数字CMOS工艺，通过MOSIS工艺制作了一个单像素数字控制逻辑测试芯片。它展示了预期的功能。一个修改后的架构也提出了一个更大的成像器阵列。
A novel time-to-first-spike CMOS imager is presented, in which the timing of a single spike from each pixel encodes the illuminance of each pixel. This temporal representation of illuminance can widen the image sensor dynamic range to over 100 dB. To reduce power consumption, an asynchronous address-event readout technique is incorporated. The imager essentially implements a pixel-level A/D conversion and benefits from the continued process scaling to deep submicron levels. Results are shown from a 32/spl times/32 pixel imager fabricated in the 0.5 /spl mu/m AMI process with measured dynamic range of 104 dB in one image. A test chip with one pixel and digital control logic has been fabricated through MOSIS using the TSMC 0.18 /spl mu/m standard digital CMOS process. It has demonstrated the expected functionalities. A modified architecture is also proposed for a larger imager array.