Stokes shift of biexcitons inAlxGa1−xNepitaxial layers
Stokes shift of biexcitons inAlxGa1−xNepitaxial layers
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AlxGa1−x外延层中双激子的斯托克斯位移
DOI：
10.1103/physrevb.70.195210
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发表时间：
2004
影响因子：
3.7
通讯作者：
T. Yokogawa
中科院分区：
文献类型：
--
作者：
Y. Yamada;Y. Ueki;Kohzo Nakamura;T. Taguchi;A. Ishibashi;Y. Kawaguchi;T. Yokogawa
利用光致发光激发光谱研究了富Ga ${\ mathm {Al}}_{x}}{\ mathm {Ga}}_{1\ensuremath{-}x}\ mathm {N}$三元合金外延层中合金无序局域化对双激子的影响。为了定量评价双激子的局域化程度，在双激子双光子吸收的基础上，实验定义了双激子的Stokes位移。双激子的结合能也被确定为三元合金中铝成分的函数。合金失序引起的双激子局部化导致双激子结合能的增强。
The effect of localization due to alloy disorder on biexcitons in Ga-rich ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}$ ternary alloy epitaxial layers has been studied by means of photoluminescence excitation spectroscopy. A Stokes shift of biexcitons was defined experimentally on the basis of two-photon absorption of biexcitons in order to evaluate the degree of biexciton localization quantitatively. A binding energy of biexcitons was also determined as a function of aluminum composition in the ternary alloys. The biexciton localization due to alloy disorder resulted in a strong enhancement of the biexciton binding energy.