Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
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DOI：
10.1063/1.1894594
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发表时间：
2004-09
影响因子：
4
通讯作者：
T. Kitade;K. Ohkura;A. Nakajima
中科院分区：
文献类型：
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作者：
T. Kitade;K. Ohkura;A. Nakajima
我们制备了具有一系列几何定义的多个岛的高掺杂硅单电子晶体管(SET)。高掺杂组具有易于制造的优点。此外，具有多个岛的组比具有单岛的组提供更大的峰谷电流比(PVCR)。在室温下观察到了高达77的库仑振荡的PVCR。这种大的PVCR对于电路操作是有利的。我们应用库仑振荡和只有一组的多门输入特性，在室温下实现了异或运算。
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.