Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2
Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2
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狄拉克半金属 Cd3As2 中的巨各向异性磁阻和平面霍尔效应
DOI：
10.1103/physrevb.97.201110
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发表时间：
2018-05-14
影响因子：
3.7
通讯作者：
Shen, Shun-Qing
中科院分区：
文献类型：
--
作者：
Li, Hui;Wang, Huan-Wen;Shen, Shun-Qing
各向异性磁电阻是指材料的电阻随电流和外磁场相互方向的变化趋势。在这里，我们报告的实验观测狄拉克半金属Cd 3As 2的巨各向异性磁电阻及其横向版本，称为平面霍尔效应。相对各向异性磁电阻为负，在2K和10 T下可达-68%.这种各向同性和双折射材料中的高各向异性和负号归因于沿着磁场的场依赖性电流，其可以由带结构的Berry曲率引起。这一观测不仅揭示了外尔和狄拉克半金属中不寻常的物理现象，而且发现了外尔和狄拉克费米子除了负磁阻之外的额外输运特征。
Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to - 68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field- dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena inWeyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.