Structural Correlation of Random Lasing Performance in Plasma-Induced Surface-Modified Gallium Nitride
Structural Correlation of Random Lasing Performance in Plasma-Induced Surface-Modified Gallium Nitride
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DOI：
10.1021/acsaom.2c00085
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发表时间：
2022-12
期刊：
影响因子：
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通讯作者：
Q. Shi;H. Fujiwara;S. Kajita;R. Yasuhara;Hirohiko Tanaka;N. Ohno;H. Uehara
中科院分区：
文献类型：
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作者：
Q. Shi;H. Fujiwara;S. Kajita;R. Yasuhara;Hirohiko Tanaka;N. Ohno;H. Uehara
用Ar等离子体和杂质共沉积照射衬底的方法对氮化镓表面进行了修饰，该方法被称为CoDE（共沉积蚀刻）。在少量Mo沉积的帮助下形成了独特的结构，而不破坏晶体结构。结构上突起的大小受Mo颗粒沉积量的影响。通过透射电子显微镜（TEM）和能谱分析（EDS）对结构形成机理进行了讨论。基于氮化镓表面的粗糙度，我们证明了在光激发下紫外区的随机激光作用。当结构尺寸大于0.05 μm2时，随机激光的阈值最低（0.06 J/cm2），这是在沉积量最少的条件下形成的。详细评价了等离子体辐照与激光产生的亚微/纳米结构之间的相关性。确定了优化随机激光的关键参数是可以由Mo沉积速率改变的结构尺寸。结果表明，该材料的发射特性可由工艺条件控制。这种随机激光制造技术有望广泛应用于各种直接带隙化合物半导体。
The surface of GaN has been modified by a simple method that irradiates the substrate with Ar plasma and impurity codeposition, which is termed CoDE (Co-Deposition Etching). Unique structures were formed by the assistance of a small amount of Mo deposition without degradation of the crystal structure. The size of protrusions on the structure is influenced by the amount of deposited Mo particles. The mechanism for the structure formation is discussed based on transmission electron microscopy (TEM) observations and energy dispersive X-ray spectroscopy (EDS) measurements. Based on the GaN surface roughness, we have demonstrated random laser action in the UV region under photoexcitation. The lowest threshold (0.06 J/cm2) for random lasing was observed where the size of the structure is larger than 0.05 μm2, which was formed under conditions with the least amount of deposition. The correlation between the submicro/nanosize structures generated by plasma irradiation and lasing was evaluated in detail. The critical parameter to optimize the random lasing was determined to be the size of structures that can be modified by the Mo deposition rate. The results confirmed that the emission properties can be controlled by the processing conditions. This random laser fabrication technique is expected to be widely applicable to various direct-bandgap compound semiconductors.