Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
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DOI：
10.1143/jjap.45.739
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发表时间：
2006-02
影响因子：
1.5
通讯作者：
A. Chakraborty;B. Haskell;H. Masui;S. Keller;J. Speck;S. Denbaars;S. Nakamura;U. Mishra
中科院分区：
文献类型：
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作者：
A. Chakraborty;B. Haskell;H. Masui;S. Keller;J. Speck;S. Denbaars;S. Nakamura;U. Mishra
报道了非极性m平面InGaN/GaN多量子阱发光二极管(LED)灯的直流和脉冲特性。采用金属有机化学气相沉积方法在自支撑的m平面GaN衬底上生长了LED结构。将面积为300×300µm2的LED封装成传统的环氧胶封灯。发光二极管的发射波长为452 nm。在驱动电流为20 mA时，获得了高达0.6 mW的连续输出功率，对应的外量子效率为1.09%。在占空比为0.25%的情况下，在1A的驱动电流下，灯的脉冲功率测量得到了23.5 mW的输出功率。
We report on the DC and pulsed performance of nonpolar m-plane InGaN/GaN multiple-quantum-well light-emitting diode (LED) lamps. LED structures were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition. LEDs with an area of 300×300 µm2 were packaged into conventional epoxy-encapsulated lamps. The emission wavelength of the LEDs was 452 nm. A CW output power as high as 0.6 mW was achieved at a drive current of 20 mA, corresponding to an external quantum efficiency of 1.09%. Pulsed power measurement on the lamps yielded an output power of 23.5 mW at a drive current of 1 A for a duty cycle of 0.25%.