Nanoscale surface pattern formation kinetics on germanium irradiated by Kr+ ions
Nanoscale surface pattern formation kinetics on germanium irradiated by Kr+ ions
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DOI：
10.1103/physrevb.86.245412
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发表时间：
2012-12-13
影响因子：
3.7
通讯作者：
Ludwig, Karl F., Jr.
中科院分区：
文献类型：
--
作者：
Anzenberg, Eitan;Perkinson, Joy C.;Ludwig, Karl F., Jr.
在垂直和平行于离子束在表面上投影的两个方向上，研究了1 keV氪离子辐照锗表面的纳米级表面形貌演变。掠入射小角x射线散射通过线性色散关系原位测量表面形貌的演变。在相对于表面法线的临界离子入射角约为62度时，观察到从平滑（稳定性）到模式形成不稳定性的转变。确定了决定表面稳定性/不稳定性的线性理论二次系数作为轰击角的函数。在Kr+辐照过程中，Ge的表面演变与在Ar+辐照下观察到的相似。然而，与Si在Ar+辐照下的情况不同，Ge在Kr+辐照下的分离稳定性和不稳定性的临界角不能用简单的Carter-Vishnyakov质量重分布模型定量再现。DOI: 10.1103 / PhysRevB.86.245412
Nanoscale surface topography evolution on Ge surfaces irradiated by 1 keV Kr+ ions is examined in both directions perpendicular and parallel to the projection of the ion beam on the surface. Grazing incidence small angle x-ray scattering is used to measure in situ the evolution of surface morphology via the linear dispersion relation. A transition from smoothing (stability) to pattern-forming instability is observed at a critical ion incidence angle of approximately 62 degrees with respect to the surface normal. The linear theory quadratic coefficients which determine the surface stability/instability are determined as a function of bombardment angle. The Ge surface evolution during Kr+ irradiation is qualitatively similar to that observed for Ar+ irradiation of Si. However, in contrast to the case of Si under Ar+ irradiation, the critical angle separating stability and instability for Ge under Kr+ irradiation cannot be quantitatively reproduced by the simple Carter-Vishnyakov mass redistribution model. DOI: 10.1103/PhysRevB.86.245412