Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm.
Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm.
复制标题
2.15 µm 处 SiGe 梯度波导的折射率分布的 Mlines 表征。
作者：
P. Barritault;M. Brun;P. Labeye;O. Lartigue;J. Hartmann;S. Nicoletti
SiGe合金具有较大的红外透明窗口，与标准互补金属氧化物半导体工艺完全兼容，适用于集成光学应用。在本文中，我们报道了Si(1-x)Ge(x)梯度折射率波导在2.15µm处的Mlines特性。首先，在0 < x < 0.4范围内，实验建立了Si(1-x)Ge(x)合金的折射率随Ge含量x的变化规律：n = 1.342x(2) + 0.295x + 3.451。然后，我们证明了基于Mlines测量的方法可以用作短回路非破坏性技术，为样品生长提供反馈。
SiGe alloys present a large Infra-Red transparency window and a full compatibility with the standard Complementary Metal Oxide Semiconductor processing making them suitable for applications in integrated optics. In this paper we report on Mlines characterization of Si(1-x)Ge(x) graded index waveguides at 2.15 µm. First, a law giving the refractive index of a Si(1-x)Ge(x) alloy as a function of the Ge content x: n = 1.342x(2) + 0.295x + 3.451, has been experimentally established in the 0 < x < 0.4 range. Then, we have demonstrated that our methodology based on Mlines measurements can be used as short-loop non-destructive technique to provide feedback for sample growth.