Effect of Interface Structure on Exchange Biased Heusler Alloy Films
Effect of Interface Structure on Exchange Biased Heusler Alloy Films
复制标题
界面结构对交换偏压赫斯勒合金薄膜的影响
DOI：
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复制
发表时间：
2012
影响因子：
2.1
通讯作者：
K. O’Grady
中科院分区：
文献类型：
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作者：
H. Endo;A. Hirohata;J. Sagar;L. Fleet;T. Nakayama;K. O’Grady
我们报告的反铁磁IrMn层交换偏置Co2 FeSi的晶粒尺寸的影响。我们还报告了Mn层插入在界面上的增强效果。交换偏置的IrMn/Co2 FeSi样品生长的HiTUS系统，这使得我们能够控制晶粒尺寸。较小的IrMn晶粒太小而不能给出大的Hex，而0.5nm厚的Mn层显著增加Hex。这种显着增加归因于界面处锰浓度的优化。这种晶粒尺寸和界面调节提供了一种控制此类系统中交换偏置的方法。
We report on the effects of grain size in antiferromagnetic IrMn layers exchange bias to Co2FeSi. We also report on an enhanced effect where Mn layers are inserted in the interface. The exchange-biased IrMn/Co2FeSi samples were grown by a HiTUS system, which allows us to control the grain size. The smaller IrMn grains were too small to give a large Hex while an Mn layer 0.5 nm thick dramatically increased Hex. This significant increase is attributed to optimization of the Mn concentration at the interface. This grain-size and interface tuning offers a way to control the exchange bias in such systems.