Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality
Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality
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DOI：
10.1063/5.0007918
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发表时间：
2020-07
影响因子：
3.2
通讯作者：
Enamul Karim;Yuki Nasuno;Abdul Kuddus;T. Ukai;Shunji Kurosu;M. Tokuda;Y. Fujii;T. Hanajiri;R. Ishikawa;K. Ueno;H. Shirai
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文献类型：
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作者：
Enamul Karim;Yuki Nasuno;Abdul Kuddus;T. Ukai;Shunji Kurosu;M. Tokuda;Y. Fujii;T. Hanajiri;R. Ishikawa;K. Ueno;H. Shirai
我们研究了热退火对原子层沉积制备的AlOx/化学隧道氧化物（ch-SiOx）堆叠层的影响，以钝化和增强聚（3,4-乙烯二氧噻吩）：聚（苯乙烯磺酸盐）(PEDOT:PSS)/n型晶体Si （n-Si）界面的场反转。在N2/H2形成气体中560℃退火30 min，使AlOx/ch-SiOx堆叠层的有效少数载流子寿命（τeff）提高到300-331 μs，降低了薄膜电阻，使PEDOT:PSS/n-Si异质结太阳能电池的内置电位和开路电压分别提高到750 mV和645 mV。这些改进源于隧道氧化物ch-SiOx的局部化学键构型，它决定了AlOx/n-Si界面的钝化能力和能带排列。
We investigated the effects of thermal annealing on an atomic layer deposition-fabricated AlOx/chemical tunnel oxide (ch-SiOx) stack layer, for passivating and enhancing the field-inversion at the poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-type crystalline Si (n-Si) interface. Annealing in N2/H2 forming gas at 560 °C for 30 min increased the effective minority carrier lifetime (τeff) of the AlOx/ch-SiOx stack layer to 300–331 μs, which decreased sheet resistance and enhanced the built-in potential and open-circuit voltage in PEDOT:PSS/n-Si heterojunction solar cells to 750 mV and 645 mV, respectively. These improvements originate from the local chemical bond configuration of the tunnel oxide ch-SiOx, which determines the passivation ability and band alignment at the AlOx/n-Si interface.