Layer‐by‐layer growth of GaAs studied by glancing angle scattering of fast ions
Layer‐by‐layer growth of GaAs studied by glancing angle scattering of fast ions
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通过快离子掠射角散射研究 GaAs 的逐层生长
DOI：
10.1063/1.110595
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发表时间：
1993
影响因子：
4
通讯作者：
M. Asari
中科院分区：
文献类型：
--
作者：
Y. Fujii;K. Narumi;K. Kimura;M. Mannami;T. Hashimoto;K. Ogawa;F. Ohtani;Tamio Yoshida;M. Asari
研究了3kev He离子在GaAs（001）表面掠射角入射时散射离子在分子束外延生长中的角分布。我们报道了从生长表面散射离子的强度振荡的观察。振荡周期对应于一个单分子层的生长时间。强度的振荡是由于在表面逐层生长过程中表面阶跃密度的振荡变化引起的。这一观察结果与GaAs外延生长表面反射高能电子衍射（RHEED）的强度振荡一致。
Angular distribution of scattered ions at glancing angle incidence of 3 keV He ions on a (001) surface of GaAs is studied during its molecular beam epitaxial growth. We report observation of intensity oscillations of the scattered ions from the growing surface. The period of the oscillations corresponds to the growth time of one monomolecular layer. The oscillations of the intensity is due to the oscillatory change in surface step density during layer‐by‐layer growth of the surface. This observation is in agreement with the intensity oscillations of reflection high‐energy electron diffraction (RHEED) from epitaxially growing surface of GaAs.