CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime
CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime
复制标题
用于具有扩展检测范围的肖特基势垒红外探测器的 CoSi2/Si1-xGex 接口
DOI：
10.1117/12.218186
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
K. Maex
中科院分区：
文献类型：
--
作者：
S. Kolodinski;R. Donaton;E. Roca;M. Caymax;K. Maex
提出了一种CoSi_2/应变Si_（1-x）Ge_x-Schottky势垒探测器，用于3 - 5微米窗口的红外探测。它可以替代PtSi/Si-Schottky势垒探测器，后者已经与读出电子器件集成在一起，但这意味着在线路中具有金属Pt作为可能的污染源的缺点。应变Si 1-xGex层与牺牲Si层顶部的硅化研究已经进行，以实现CoSi 2/应变Si 1-xGex界面，这将形成探测器的心脏。集成这种检测器与读出电子的可能性进行了严格审查。第一CoSi 2/Si 1-xGex探测器已处理产生的势垒高度低至229毫电子伏。
A CoSi2/strained-Si1-xGex-Schottky barrier detector is proposed for detection of infrared radiation in the 3 - 5 micrometers window. It could be a substitute for PtSi/Si-Schottky barrier detectors, which have already been integrated with readout electronics, but which imply the disadvantage of having the metal Pt in the line as a possible source of contamination. A silicidation study on strained Si1-xGex-layers with sacrificial Si-layers on top has been carried out to realize CoSi2/strained-Si1-xGex-interfaces, which will form the heart of the detector. The possibilities to integrate this detector with readout electronics are critically reviewed. First CoSi2/Si1-xGex-detectors have been processed which yield barrier heights as low as 229 meV.