Effect of surface reactive site density and reactivity on the growth of atomic layer deposited WNxCy films
Effect of surface reactive site density and reactivity on the growth of atomic layer deposited WNxCy films
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表面反应位点密度和反应性对原子层沉积 WNxCy 薄膜生长的影响
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
K. Maex
中科院分区：
文献类型：
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作者：
A. Hoyas;C. Whelan;J. Schuhmacher;J. Celis;K. Maex
原子层沉积获得的氮化钨（wxcy）薄膜的生长取决于衬底反应位点的密度和类型。二氧化硅薄膜的生长由硅醇基浓度决定，硅醇基浓度是衬底生长温度的函数。由于最初的化学气相沉积生长，当WN x cy沉积在端氢硅上时，观察到WN x cy的增强生长。在氮化硅表面上，与碳化物和氧化物表面相比，观察到一个短暂的瞬态状态，这归因于三乙基硼前驱体的增强结合和氮化硅/WN x cy界面的相容性。
The growth of tungsten nitride carbide, WN x C y , films obtained by atomic layer deposition is determined by the density and type of substrate reactive sites. WN x C y film growth on silicon dioxide is determined by the silanol group concentration, which is a function of the substrate growth temperature. An enhanced WN x C y growth is observed when WN x C y is deposited on hydrogenterminated silicon due to an initial chemical vapor deposition growth. On silicon nitride, a short transient regime is observed in comparison to the carbide and oxide surfaces attributed to enhanced binding of the triethylboron precursor and compatibility at the interface silicon nitride/WN x C y .