EFFECTS OF SPIN-ORBIT COUPLING IN SI AND GE
EFFECTS OF SPIN-ORBIT COUPLING IN SI AND GE
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DOI：
10.1103/physrev.126.1317
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发表时间：
1962-01-01
期刊：
影响因子：
--
通讯作者：
LIU, L
中科院分区：
文献类型：
--
作者：
LIU, L
用有效质量法和正交平面波型波函数对某些半导体中的自旋轨道效应进行了处理。在这种形式中，晶体中价态的自旋轨道分裂可以直接用原子核态自旋轨道分裂的实验值或计算值来表示。计算结果与实验结果吻合良好，硅在Γ 25 ‘处分裂，锗在Γ 25 ’和l3 '处分裂。给出了晶体中价态的自旋轨道分裂比相应原子值增强的证明。
A treatment of spin-orbit effects in some semiconductors is given using the effective-mass method and orthogonalized-plane-wave type wave functions. In this formalism, the spin-orbit splitting of valence states in the crystal is expressed directly in terms of either experimental or calculated values of the spin-orbit splitting of the atomic-core states. The calculation yields values in good agreement with experiments for the splitting at Γ 25′ for Si and at both Γ 25′ and L 3′ for Ge. A demonstration is given of the enhancement of the spin-orbit splitting of valence states in the crystal over the corresponding atomic value.