Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors
Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors
复制标题
中子辐照硅探测器电荷收集效率的测定
DOI：
10.1109/tns.2009.2033995
复制
发表时间：
2007
影响因子：
1.8
通讯作者：
A. Messineo
中科院分区：
文献类型：
--
作者：
M. Petterson;R. F. Hurley;K. Arya;C. Betancourt;M. Bruzzi;B. Colby;M. Gerling;C. Meyer;J. Pixley;T. Rice;H. Sadrozinski;J. Bernardini;L. Borrello;F. Fiori;A. Messineo
收集到的电荷从p型硅条传感器照射到超级LHC通量已确定与β源使用快速前端电子学。在加速退火之前和之后，已经测量了收集的电荷和命中检测效率的偏置电压依赖性。在SuperLHC的性能的预测。
The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.