Amorphous gallium oxide nanowires synthesized by metalorganic chemical vapor deposition
Amorphous gallium oxide nanowires synthesized by metalorganic chemical vapor deposition
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DOI：
10.1016/j.mseb.2004.04.002
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发表时间：
2004-08-25
期刊：
影响因子：
--
通讯作者：
Lee, C
中科院分区：
文献类型：
--
作者：
Kim, NH;Kim, HW;Lee, C
我们利用三甲基镓（TMGa）和氧气（O-2）的混合反应在蓝宝石衬底上制备了大规模的氧化镓纳米线阵列。氧化镓纳米线的横截面具有直径约40-110 nm的圆形形状。透射电子显微镜和X射线衍射分析表明纳米线为非晶相。光致发光测试表明，纳米线在365和470 nm处有两个发光带。(C)2004 Elsevier B. V.保留所有权利。
We have prepared the large-scaled gallium oxide nanowire arrays on sapphire substrates using a reaction of a trimethylgallium (TMGa) and oxygen (O-2) mixture. The cross-section of the gallium oxide nanowires had a circular shape with the diameter of about 40-110 nm. Transmission electron microscopy and X-ray diffraction analysis together showed that the nanowires were amorphous phase. Photoluminescence measurements indicated that as-prepared nanowires showed two emission band at 365 and 470 nm. (C) 2004 Elsevier B.V. All rights reserved.