Shear Piezoresistance in MOSFET Devices Under General Operating Conditions
Shear Piezoresistance in MOSFET Devices Under General Operating Conditions
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一般工作条件下 MOSFET 器件的剪切压阻
DOI：
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发表时间：
2011
影响因子：
3.1
通讯作者：
O. Paul
中科院分区：
文献类型：
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作者：
B. Sbierski;P. Gieschke;O. Paul
本文介绍了基于场效应晶体管（FET）反转层中剪切压阻效应的面内应力传感器的建模和表征。采用商用0.6 μm互补MOS技术制备的FET测试结构承受面内剪切和法向应力。提取了覆盖整个工作范围的栅极、体积和反转载流子电位的一套完整的反转层压阻系数。测定了具有多个横向通道接触对的100 μm长3 μm宽矩形n-和p- mosfet伪霍尔电压的应力灵敏度。将实验值与分析模型的预测值进行比较，分析模型将应力视为无应力装置的扰动。在靠近漏极的侧向接触对的饱和状态下，观察到与掐断点附近的大电位下降相关的强烈增强的灵敏度。对于距离源极和漏极距离大于12.5 μm的横向通道接触对，在| = 5 V时，传感器工作模型的不准确性在n型器件和p型器件中分别优于14%和5%。对于距离漏极1 μm的接触对，由于退化效应，n型器件和p型器件的误差分别增加到70%和52%。
This paper describes the modeling and characterization of in-plane stress sensors based on the shear piezoresistance effect in field-effect-transistor (FET) inversion layers. FET test structures fabricated in a commercial 0.6-μm complementary MOS technology were subjected to in-plane shear and normal stresses. A complete set of inversion layer piezoresistive coefficients was extracted for gate, bulk, and inversion carrier potentials covering the entire operating range. Stress sensitivities of the pseudo-Hall voltage of rectangular 100-μm-long 3-μm-wide n- and p-MOSFETs with multiple lateral channel contact pairs were determined. The experimental values are compared to predictions from an analytical model treating the stress as a perturbation of the unstressed device. Strongly enhanced sensitivities associated with the large potential drop close to the pinch-off point are observed in saturation for lateral contact pairs near the drain. The inaccuracy of the model for sensor operation at |VG| = 5 V is better than 14% for n-type devices and 5% for p-type devices for lateral channel contact pairs distant from source and drain by more than 12.5 μm. For contact pairs 1 μm from the drain, due to degradation effects, the inaccuracies increase to 70% and 52% for n- and p-type devices, respectively.