Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1-xBix
Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1-xBix
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DOI：
10.1103/physrevb.83.075307
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发表时间：
2011-02-16
影响因子：
3.7
通讯作者：
Mascarenhas, A.
中科院分区：
文献类型：
--
作者：
Kini, R. N.;Ptak, A. J.;Mascarenhas, A.
利用电输运（Hall）和光致发光（PL）技术研究了Bi掺杂对稀铋化物合金GaAs 1-xBix中空穴迁移率的影响。我们的测量结果表明，随着Bi浓度的增加，空穴迁移率降低。p型GaAsBi外延层随温度变化的霍尔输运数据的分析沿着与低温PL测量的p掺杂和未掺杂的外延层表明，Bi掺入的结果在形成的几个陷阱能级以上的价带，这是我们属性的Bi-Bi对状态。随着Bi浓度的增加，空穴迁移率的降低可以解释为在孤立的Bi和Bi-Bi对状态下的散射引起的。我们还观察到随着Bi的掺入，空穴浓度降低。我们认为，Bi-Ga异反位缺陷补偿了受主，从而降低了有效空穴浓度。
We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs1-xBix using electrical transport ( Hall) and photoluminescence (PL) techniques. Our measurements show that the hole mobility decreases with increasing Bi concentration. Analysis of the temperature-dependent Hall transport data of p-type GaAsBi epilayers along with low-temperature PL measurements of p-doped and undoped epilayers suggests that Bi incorporation results in the formation of several trap levels above the valence band, which we attribute to Bi-Bi pair states. The decrease in hole mobility with increasing Bi concentration can be explained as being caused by scattering at the isolated Bi and the Bi-Bi pair states. We also observed a decrease in hole concentration with Bi incorporation. We believe that Bi-Ga heteroantisite defects compensate the acceptors, thus reducing the effective hole concentration.