Evidence for photogenerated intermediate hole polarons in ZnO

Evidence for photogenerated intermediate hole polarons in ZnO
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DOI:
10.1038/ncomms7901
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发表时间:
2015-04
影响因子:
16.6
通讯作者:
H. Sezen;Honghui Shang;F. Bebensee;Chengwu Yang;Maria Buchholz;A. Nefedov;S. Heissler;Christian Carbogno;M. Scheffler;P. Rinke;C. Wöll
H. Sezen;Honghui Shang;F. Bebensee;Chengwu Yang;Maria Buchholz;A. Nefedov;S. Heissler;Christian Carbogno;M. Scheffler;P. Rinke;C. Wöll
中科院分区:
综合性期刊1区
文献类型:
--
作者:
H. Sezen;Honghui Shang;F. Bebensee;Chengwu Yang;Maria Buchholz;A. Nefedov;S. Heissler;Christian Carbogno;M. Scheffler;P. Rinke;C. Wöll

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Despite their pronounced importance for oxide-based photochemistry, optoelectronics and photovoltaics, only fairly little is known about the polaron lifetimes and binding energies. Polarons represent a crucial intermediate step populated immediately after dissociation of the excitons formed in the primary photoabsorption process. Here we present a novel approach to studying photoexcited polarons in an important photoactive oxide, ZnO, using infrared (IR) reflection–absorption spectroscopy (IRRAS) with a time resolution of 100 ms. For well-defined (10-10) oriented ZnO single-crystal substrates, we observe intense IR absorption bands at around 200 meV exhibiting a pronounced temperature dependence. On the basis of first-principles-based electronic structure calculations, we assign these features to hole polarons of intermediate coupling strength.