POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION
POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION
复制标题
DOI：
10.1063/1.114947
复制
发表时间：
1995-09-11
影响因子：
4
通讯作者：
TIKHODEEV, SG
中科院分区：
文献类型：
--
作者：
KOVALEV, D;BENCHORIN, M;TIKHODEEV, SG
本文报道了在两种激发几何结构下多孔硅光致发光的各向异性线性极化现象。在正常的激发几何形状（激励光束垂直于样品（100）表面）中，可以看到高达20%的线性发光偏振平行于激发偏振。在边缘激发几何（激发光入射到样品的切割边缘）中，发光偏振主要在[100]方向（垂直于表面）排列。这种效应是在一个介电模型的框架内描述的，在这个模型中，多孔硅被认为是一种轻微变形、拉长和扁平的介电椭圆硅纳米晶体的集合体，在[100]方向上具有优选的取向。(C) 1995年美国物理研究所。
We report the observation of the anisotropic linear polarization of porous Si photoluminescence measured in two excitation geometries. In the normal excitation geometry (exciting beam normal to the sample (100) surface) linear luminescence polarization of as much as 20% is seen parallel to the excitation polarization. In the edge excitation geometry (exciting light incident on a cleaved edge of the sample) the luminescence polarization is aligned mainly in the [100] direction (normal to the surface). The effect is described within the framework of a dielectric model in which porous Si is considered as an aggregate of slightly deformed, elongated and flattened, dielectric elliptical Si nanocrystals with preferred orientation in the [100] direction. (C) 1995 American Institute of Physics.