PATTERNING AND ETCHING OF AMORPHOUS TEFLON FILMS
PATTERNING AND ETCHING OF AMORPHOUS TEFLON FILMS
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DOI：
10.1007/bf02651379
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发表时间：
1994-08-01
影响因子：
2.1
通讯作者：
FILESSESLER, LA
中科院分区：
文献类型：
--
作者：
CHO, CC;WALLACE, RM;FILESSESLER, LA
非晶聚四氟乙烯（R），通过旋涂和热蒸发沉积，已被研究作为高性能互连的低介电常数绝缘体。由于非晶特氟隆的惰性化学键，很难在其上存款薄膜，因此使用等离子体蚀刻和Zonyl FSN（R）含氟表面活性剂来提高光致抗蚀剂对非晶特氟隆的粘附力。等离子体蚀刻显示，以增加表面粗糙度和改变化学键的无定形聚四氟乙烯，从而提高金属和二氧化硅的粘附力无定形聚四氟乙烯。虽然非晶特氟龙不能通过湿化学品蚀刻，但在Ar、O2或CF 4/O2等离子体中蚀刻薄膜非常有效。
Amorphous Teflon(R), deposited by spin-coating and thermal evaporation, has been studied as a low dielectric constant insulator for high performance interconnects. Since it is difficult to deposit a film on amorphous Teflon because of its inert chemical bonds, plasma etching and Zonyl FSN(R) fluorosurfactant are used to improve the adhesion of photoresist to amorphous Teflon. Plasma etching is shown to increase surface roughness and change chemical bonds of the amorphous Teflon, resulting in improved adhesion of metals and SiO2 to amorphous Teflon. While amorphous Teflon cannot be etched by wet chemicals, etching the films in Ar, O2, or CF4/O2 plasma is very effective.