Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures
Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures
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DOI：
10.1063/1.4779686
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发表时间：
2013-01-21
影响因子：
3.2
通讯作者：
Salamo, G. J.
中科院分区：
文献类型：
--
作者：
Mazur, Yu. I.;Dorogan, V. G.;Salamo, G. J.
利用光致发光（PL）谱研究了由InAs量子点和InGaAs量子点组成的混合量子阱系统中量子阱层和量子点层之间载流子的热致重分布。这种重新分布显著影响QD和QW PL强度，这取决于点阱势垒厚度和高度。对于比较薄的障碍，隧道和热载流子通量之间的相互作用变得至关重要，在隧道注入点阱结构在高温下的激子动力学。对于一个足够厚的间隔，它表明，激子本地化内的量子阱，显然引起的量子点应变场，在低温下的传输动力学有着深远的影响。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4779686]
The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is studied by means of photoluminescence (PL) spectroscopy. This redistribution significantly affects the QD and QW PL intensities depending both on the dot-well barrier thickness and height. For comparatively thin barriers, the interplay between tunnel and thermal carrier fluxes becomes crucial, governing the exciton dynamics in a tunnel injection dot-well structure at elevated temperatures. For a sufficiently thick spacer, it is shown that exciton localization within the QW, apparently induced by QD strain fields, has a profound influence on the transfer dynamics at low temperatures. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4779686]