Giant nonlinearity via breaking parity-time symmetry: A route to low-threshold phonon diodes
Giant nonlinearity via breaking parity-time symmetry: A route to low-threshold phonon diodes
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通过打破奇偶校验时间对称性实现巨大的非线性：低阈值声子二极管的途径
DOI：
10.1103/physrevb.92.115407
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发表时间：
2015-09
影响因子：
3.7
通讯作者：
Franco Nori
中科院分区：
文献类型：
--
作者：
Jing Zhang;Bo Peng;Şahin Kaya Özdemir;Yu-xi Liu;Hui Jing;Xin-you Lü;Yu-long Liu;Lan Yang;Franco Nori
仅允许波在一个方向上传输的不可逆装置在许多科学领域中是必不可少的，包括电子学、光学、声学和热力学。使用此类不可逆器件操纵声子可能具有一系列应用，例如声子二极管、晶体管、开关等。实现不可逆声子器件的一种方法是使用对声子具有强非线性响应的材料。然而，获得所需的强机械非线性并不容易，特别是对于少声子的情况。在这里，我们提出了一种使用 $\mathcal{PT}$ 对称结构放大非线性的通用机制，并表明可以使用 $\mathcal{PT}$ 对称机械系统来制造片上微型声子二极管，其中机械非线性非常弱的有损机械谐振器耦合到具有机械增益但没有机械非线性的机械谐振器。当该耦合系统从$\mathcal{PT}$对称状态转变为破缺$\mathcal{PT}$对称状态时，机械非线性从有损谐振器转移到有增益谐振器，系统的有效非线性显着增强。由于 $\mathcal{PT}$ 对称结构引起的增益-损失平衡，这种增强的机械非线性几乎是无损的。这种增强的无损机械非线性随后用于控制声子传播的方向，并且可以大大降低（三个数量级以上）观察单向声子传输所需的输入场强度的阈值。我们提出了一种可通过实验实现的这种类型的无损低阈值声子二极管。我们的研究为构建片上少声子器件和混合声子-光子组件开辟了新的视角。
Nonreciprocal devices that permit wave transmission in only one direction are indispensible in many fields of science including, e.g., electronics, optics, acoustics, and thermodynamics. Manipulating phonons using such nonreciprocal devices may have a range of applications such as phonon diodes, transistors, switches, etc. One way of achieving nonreciprocal phononic devices is to use materials with strong nonlinear response to phonons. However, it is not easy to obtain the required strong mechanical nonlinearity, especially for few-phonon situations. Here, we present a general mechanism to amplify nonlinearity using $\mathcal{PT}$-symmetric structures, and show that an on-chip micro-scale phonon diode can be fabricated using a $\mathcal{PT}$-symmetric mechanical system, in which a lossy mechanical-resonator with very weak mechanical nonlinearity is coupled to a mechanical resonator with mechanical gain but no mechanical nonlinearity. When this coupled system transits from the $\mathcal{PT}$-symmetric regime to the broken-$\mathcal{PT}$-symmetric regime, the mechanical nonlinearity is transferred from the lossy resonator to the one with gain, and the effective nonlinearity of the system is significantly enhanced. This enhanced mechanical nonlinearity is almost lossless because of the gain-loss balance induced by the $\mathcal{PT}$-symmetric structure. Such an enhanced lossless mechanical nonlinearity is then used to control the direction of phonon propagation, and can greatly decrease (by over three orders of magnitude) the threshold of the input-field intensity necessary to observe the unidirectional phonon transport. We propose an experimentally realizable lossless low-threshold phonon diode of this type. Our study opens up new perspectives for constructing on-chip few-phonon devices and hybrid phonon-photon components.
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影响因子：
8.6
作者：
Lumer, Yaakov;Plotnik, Yonatan;Segev, Mordechai
通讯作者：
Segev, Mordechai
影响因子：
16.6
作者：
Mahboob, I.;Flurin, E.;Nishiguchi, K.;Fujiwara, A.;Yamaguchi, H.
通讯作者：
Yamaguchi, H.
影响因子：
2.4
作者：
Xue‐Feng Zhu;H. Ramézani;Chengzhi Shi;Jie Zhu;Xiang Zhang
通讯作者：
Xue‐Feng Zhu;H. Ramézani;Chengzhi Shi;Jie Zhu;Xiang Zhang
影响因子：
64.8
作者：
J. Thompson;B. Zwickl;A. Jayich;F. Marquardt;S. Girvin;J. G. Harris
通讯作者：
J. Thompson;B. Zwickl;A. Jayich;F. Marquardt;S. Girvin;J. G. Harris
DOI：
10.1063/1.4892417
发表时间：
2013-06
期刊：
CLEO: 2013
影响因子：
--
作者：
Mian Zhang;G. de Oliveira Luiz;Shreyas Y. Shah;P. Nussenzveig;G. Wiederhecker;M. Lipson
通讯作者：
Mian Zhang;G. de Oliveira Luiz;Shreyas Y. Shah;P. Nussenzveig;G. Wiederhecker;M. Lipson