Role of induced exchange bias in zero field spin–orbit torque magnetization switching in Pt/[Ni/Co]/PtMn
Role of induced exchange bias in zero field spin–orbit torque magnetization switching in Pt/[Ni/Co]/PtMn
复制标题
感应交换偏压在 Pt/[Ni/Co]/PtMn 零场自旋轨道扭矩磁化翻转中的作用
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
C. Lai
中科院分区：
文献类型：
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作者：
M. Vergés;Vinod Kumar;P. Lin;S. Mangin;C. Lai
电流感生磁化切换对于开发非易失性磁性存储器（MRAM）特别感兴趣。研究了Pt/铁磁/反铁磁Pt/[Co/Ni]2/PtMn霍尔交叉中的自旋轨道矩（SOT）开关.对于沉积态样品，没有表现出交换偏置效应，SOT开关仅在面内外加电场下观察到。在这种情况下，当面内施加场趋于零时，所需的电流切换发散，并且由切换产生的霍尔电压信号趋于零。然而，相同的样品垂直于平面退火，然后在面内施加的磁场，这不仅表现出平方霍尔电压与电流的磁滞回线，但也在零磁场中的适度的开关电流。这一过程诱导了具有增强的垂直磁各向异性的面外交换偏置和诱导零场SOT开关的面内交换偏置。的SOT开关的退火程序作为注入电流和面内场的函数的研究。这些结果可能会影响未来的自旋电子器件，如SOT-MRAM的设计。
Current induced magnetization switching is of particular interest to develop non-volatile magnetic memories (MRAM). We studied spin–orbit torque (SOT) switching in a Pt/ferromagnet/antiferromagnet Pt/[Co/Ni]2/PtMn Hall cross. For the as-deposited sample, which showed no exchange bias effect, SOT switching is observed only under an in-plane applied field. In this case, when the in-plane applied field tends to zero, the current switching required diverges and the Hall voltage signal generated by the switching tends to zero. However, the same sample is annealed perpendicular to the plane and then in an in-plane applied field, which demonstrated not only square Hall voltage vs current hysteresis loops but also a moderate switching current in zero magnetic field. This procedure induces an out-of-plane exchange bias with strengthened perpendicular magnetic anisotropy and an in-plane exchange bias, which induces zero field SOT switching. The study of the SOT switching for both annealing procedures as a function of the injected current and the in-plane field is shown. These results could impact the design of future spintronics devices such as SOT-MRAM.
影响因子：
44.1
作者：
Baltz, V.;Manchon, A.;Tserkovnyak, Y.
通讯作者：
Tserkovnyak, Y.