Spin-orbit torques in GaN/NiFe bilayers
Spin-orbit torques in GaN/NiFe bilayers
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GaN/NiFe 双层中的自旋轨道扭矩
DOI：
10.1088/1361-6463/aae553
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Rui Xiong
中科院分区：
文献类型：
--
作者：
Xin Luo;Bochong Wang;Weiming Lv;Guohao Yu;Zhihong Lu;Zhongming Zeng;Rui Xiong
本文报道了用自旋矩铁磁共振（ST-FMR）方法研究不同GaN/NiFe双层膜的自旋轨道矩。基于Ge-GaN和Fe-GaN的GaN/NiFe双层膜显示出不同的ST-FMR结果，即电压信号强度、线形和共振场。Ge-GaN/NiFe双层膜比Fe-GaN/NiFe双层膜具有更大的面内转矩（τ）和面外转矩（τ）之比，这可能是由于Ge-GaN和Fe-GaN中费米能级的不同所致。此外，这两个系统的扭矩比趋于随微波频率而减小。我们的结果可能有助于理解GaN中的自旋轨道力矩。
We report the study of spin–orbit torques in different GaN/NiFe bilayers using a spin-torque ferromagnetic resonance (ST-FMR) method. The GaN/NiFe bilayer based on Ge–GaN and Fe–GaN displayed distinct ST-FMR results, ie voltage signal intensity, lineshape, and resonance field. The Ge–GaN/NiFe bilayer exhibited a stronger torque ratio between in-plane torque (τ∥) and out-of-plane torque (τ⊥) than the Fe–GaN/NiFe bilayer, which can be ascribed to the difference of Fermi energy level in Ge–GaN and Fe–GaN. Furthermore, the torque ratio of both systems tends to decrease with microwave frequency. Our results may help to understand the spin–orbit torques in GaN.