Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements
Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements
复制标题
具有 ZrO2 种子层的基于 Hf0.5Zr0.5O2 的 FeFET 的存储窗口和耐久性改进，具有快速电压脉冲测量的特点
DOI：
10.1186/s11671-019-3063-2
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发表时间：
2019-07-26
影响因子：
--
通讯作者：
Zhou, Yichun
中科院分区：
文献类型：
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作者：
Xiao, Wenwu;Liu, Chen;Zhou, Yichun
The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO2-based FeFET with a MFIS gate stack could satisfy the requirements for practical applications, its memory window (MW) and reliability with respect to endurance should be further improved. This work investigates the advantage of employing ZrO2 seed layers on the MW, retention, and endurance of the Hf0.5Zr0.5O2 (HZO)-based FeFETs with MFIS gate stacks, by using fast voltage pulse measurements. It is found that the HZO-based FeFET with a ZrO2 seed layer shows a larger initial and 10-year extrapolated MW, as well as improved endurance performance compared with the HZO-based FeFET without the ZrO2 seed layer. The results indicate that employing of a direct crystalline high-k/Si gate stack would further improve the MW and reliability of the HfO2-based FeFETs.
