Using topological insulator proximity to generate perfectly conducting channels in materials without topological protection
Using topological insulator proximity to generate perfectly conducting channels in materials without topological protection
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DOI：
10.1088/1367-2630/16/11/113058
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发表时间：
2014-11-24
影响因子：
3.3
通讯作者：
Richter, Klaus
中科院分区：
文献类型：
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作者：
Essert, Sven;Krueckl, Viktor;Richter, Klaus
我们发现，没有拓扑保护的材料和拓扑绝缘体(TI)的混合结构可以在非拓扑部分产生理想导电通道(PCCs)。这些态继承了TI附近的拓扑保护，但由于它们的延展性，对时间反转对称破缺更脆弱。我们探讨了它们在模型杂化系统的能带结构中的形成，以及与基于HgTe/CdTe的二维TI有关的现实异质结构，并展示了如何用有效的边界条件来理解它们的出现。利用对HgTe/CdTe材料体系的数值量子输运计算，我们提出了两种实验设置，它们允许通过磁导和散粒噪声来检测局域区和扩散区的感生PCCs。
We show that hybrid structures of topological insulators (TI) and materials without topological protection can be employed to create perfectly conducting channels (PCCs) hosted in the non-topological part. These states inherit the topological protection from the proximity of the TI but are more fragile to time-reversal symmetry breaking because of their extended character. We explore their formation in the band structure of model hybrid systems as well as realistic heterostructures involving HgTe/CdTe-based two-dimensional TIs and show how their appearance can be understood in terms of an effective boundary condition. Using numerical quantum transport calculations for the HgTe/CdTe material system we propose two experimental settings which allow for the detection of the induced PCCs, both in the localized and diffusive regime, by means of magneto conductance and shot noise.