Solid-state capacitor for voltage control of magnetism formed on a flexible substrate
Solid-state capacitor for voltage control of magnetism formed on a flexible substrate
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DOI：
10.7567/1347-4065/ab4de9
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发表时间：
2019-10
影响因子：
1.5
通讯作者：
K. Ochi;T. Hirai;S. Ota;T. Koyama;Tsuyoshi Sekitani;Daichi Chiba
中科院分区：
文献类型：
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作者：
K. Ochi;T. Hirai;S. Ota;T. Koyama;Tsuyoshi Sekitani;Daichi Chiba
我们在有机柔性基板上制造了固态电容器，该基板具有超薄铁磁Co电极和通过原子层沉积形成的HfO2介电层。平行于电容器平面施加拉应力。击穿应变随着 HfO2 层厚度的减小而单调增加。根据方块电阻测量，10 nm 厚的 HfO2 电容器可实现高达 1.5% 的应变耐受性。 Co层的磁各向异性可通过在Co和对电极之间施加电压来控制。压控磁各向异性的调制效率几乎与应变无关。
We fabricated a solid-state capacitor on an organic flexible substrate, which has an ultra-thin ferromagnetic Co electrode with a HfO2 dielectric layer formed by atomic layer deposition. Tensile stress was applied parallel to the capacitor plane. The breakdown strain monotonically increases with a reduction in HfO2 layer thickness. From the sheet resistance measurement, strain endurance up to 1.5% is realized in the capacitor with 10 nm thick HfO2. A magnetic anisotropy of the Co layer is controllable by applying voltage between the Co and counter electrode. The modulation efficiency of the voltage-controlled magnetic anisotropy is almost independent of the strain.