A highly conducting partially oxidized salt of axially substituted phthalocyanine. Structure and physical properties of TPP[Co(Pc)(CN)2]2 {TPP=tetraphenylphosphonium, [Co(Pc)(CN)2]=dicyano(phthalocyaninato)cobalt(III)}
A highly conducting partially oxidized salt of axially substituted phthalocyanine. Structure and physical properties of TPP[Co(Pc)(CN)2]2 {TPP=tetraphenylphosphonium, [Co(Pc)(CN)2]=dicyano(phthalocyaninato)cobalt(III)}
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DOI：
10.1039/a800123e
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发表时间：
1998
影响因子：
--
通讯作者：
H. Hasegawa;T. Naito;T. Inabe;T. Akutagawa;Takayoshi Nakamura
中科院分区：
文献类型：
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作者：
H. Hasegawa;T. Naito;T. Inabe;T. Akutagawa;Takayoshi Nakamura
通过电结晶TPP[Co(Pc)(CN)2]可以得到TPP[Co(Pc)(CN)2]2的高导电部分氧化盐。该晶体由一维 TPP 阵列组成，周围环绕着滑移堆叠的一维 [Co(Pc)(CN)2 ] 链。室温下的电导率相当高，为120 Ω–1 cm–1，但在低温下呈弱半导体性。这种堆叠模式的带宽是根据热电功率测量和扩展的休克尔计算来估计的。后者表明滑动堆叠模式的带宽值约为面对面堆叠模式的带宽值的 40%。根据热电势的金属温度依赖性估计的宽度实际上与根据计算估计的宽度非常一致。
A highly conducting partially oxidized salt of TPP[Co(Pc)(CN)2 ]2 can be obtained by electrocrystallization of TPP[Co(Pc)(CN)2 ]. The crystal is composed of one-dimensional TPP arrays surrounded by slipped-stacked one-dimensional [Co(Pc)(CN)2 ] chains. The electrical conductivity at room temperature is quite high, 120 Ω–1 cm–1 , though at low temperature it is weakly semiconducting. The band width for this stacking mode has been estimated from both thermoelectric power measurements and an extended Huckel calculation. The latter suggests that the band width value for the slipped-stacking mode is about 40% of the value for the face-to-face stacking mode. The width estimated from the metallic temperature dependence of the thermoelectric power is actually in excellent agreement with that estimated from the calculation.