Impurity tracing of diffusion mechanisms in hillock growth on aluminum films
Impurity tracing of diffusion mechanisms in hillock growth on aluminum films
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DOI：
10.1002/(sici)1096-9918(199602)24:2
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发表时间：
1996-02
影响因子：
1.7
通讯作者：
N. Rosen
中科院分区：
文献类型：
--
作者：
N. Rosen
铝互连线上的小丘生长是微电子工业的一个主要关注点，而表面扩散、晶界扩散和膜/表面界面扩散等可能的因素在小丘生长中的相对重要性一直存在争议。在硅衬底上分层沉积铝膜，在顶层和底层中引入银和镁作为杂质，纯铝介于两者之间。然后对薄膜进行退火处理，之后采用西姆斯和俄歇电子能谱来表征薄膜生长表面上的小丘和其他位点的组成。其目的是确定土丘中的物质起源的区域，从而推断出它被运输的扩散机制。初步结果表明，晶界扩散是主要的质量传输机制提供的小丘生长的材料。
Hillock growth on aluminum interconnects is a major concern of the microelectronics industry, and there has been dispute on the relative importance of such possible factors in hillock growth as surface diffusion, grain boundary diffusion and film/surface interface diffusion. Aluminum films were sputter-deposited on silicon substrates in layers, with silver and magnesium introduced as impurities in the top and bottom layers and pure aluminum in-between. The films were then annealed, after which SIMS and Auger electron spectroscopy were employed to characterize the composition of the hillocks and other sites on the film growth surface. The objective was to determine the region in which the material in the hillocks had originated, and thus to deduce the diffusion mechanisms by which it had been transported. Preliminary results suggest that grain boundary diffusion is the principal mass transport mechanism supplying material for hillock growth.